Abstract: SiC MOSFET has the advantages of high temperature resistance, high voltage resistance and fast switching, so it has been widely used in various topologies. However, the high switching ...
Abstract: In this paper, TCAD simulations provide insights on the effect of a non-linear dielectric gate stack on the short-circuit performance of silicon carbide (SiC) power MOSFETs. In particular, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback